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Si85xx
Table 5. IEC 60747-5-2 Insulation Characteristics*
Parameter
Symbol
Test Condition
Characteristic
Unit
SOIC-20
Maximum Working Insulation Voltage
V IORM
1414
V peak
Input to Output Test Voltage
V PR
Method b1
2652
V peak
(V IORM x 1.875 = V PR , 100%
Production Test, t m = 1 sec,
Partial Discharge < 5 pC)
Transient Overvoltage
V IOTM
t = 60 s
8000
V peak
Pollution Degree
(DIN VDE 0110, Table 1)
2
Insulation Resistance at T S , V IO = 500 V
R S
>10 9
W
Note: The Si85xx is suitable for basic and reinforced electrical isolation only within the safety limit data. Maintenance of the
safety data is ensured by protective circuits. The Si85xx provides a climate classification of 40/125/21. Note that the
Si85xx is compliant with the IEC60747-5-2 but neither certified nor inspected to IEC60747-5-2. The Si85xx is
compliant, certified, and factory-inspected to IEC60950.
Table 6. IEC Safety Limiting Values 1
Case Temperature
Safety Input Current
Parameter
Symbol
T S
I S
Test Condition
? JA = 85, V DD = 5.5 V,
SOIC-20
150
30
Unit
°C
A
IIN to IOUT = 20 A,
T J = 150 °C, T A = 25 °C
Device Power Dissipation 2
P D
0.9
W
Notes:
1. Maximum value allowed in the event of a failure. Refer to the thermal derating curve in Figure 1.
2. The Si85xx is tested with V DD = 5.5 V, T J = 150 oC, C L = 15 pF, and with an input current from IIN to IOUT equal to
20 Amps at 500 kHz (duty cycle = 50%).
Preliminary Rev. 0.4
7
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